2SA949-Y,ONK-1F(J
TRANS PNP 150V 0.05A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage's 2SA949-Y-ONK-1F-J is a PNP bipolar junction transistor featuring a 150V collector-emitter breakdown voltage and a 50mA collector current capability at maximum. This component offers a transition frequency of 120MHz and a maximum power dissipation of 800mW. It is housed in a TO-92MOD package suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 10mA and 5V, and a collector cutoff current (ICBO) of 100nA maximum. The saturation voltage (Vce Sat) is specified at 800mV maximum for an operating point of 1mA base current and 10A collector current. This device finds application in various electronic circuits, including power supplies and audio amplification stages.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 1mA, 10A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 800 mW |
Request a Quote
Clients Also Buy
2SD1407A-Y(F)
TRANS NPN 100V 5A TO220NIS
TTC012(Q)
TRANS NPN 375V 2A PW-MOLD2
2SA1162S-Y, LF(D
TRANS PNP 50V 0.15A SMINI
