2SA949-Y,F(J
TRANS PNP 150V 0.05A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor (BJT), part number 2SA949-Y-F-J. This through-hole device features a collector current (Ic) of 50 mA and a collector-emitter breakdown voltage (Vce(max)) of 150 V. The transition frequency (fT) is specified at 120 MHz, with a minimum DC current gain (hFE) of 70 at 10 mA and 5 V. Maximum power dissipation is 800 mW, and the operating junction temperature can reach 150°C. The package is a TO-92MOD (TO-226-3, TO-92-3 Long Body). This component is suitable for applications in industrial and consumer electronics where precise amplification and switching are required.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 1mA, 10A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 800 mW |
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