2SA949-O(TE6,F,M)
TRANS PNP 150V 0.05A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's 2SA949-O-TE6-F-M- is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a maximum collector current (Ic) of 50 mA and a collector-emitter breakdown voltage (Vce) of 150 V. With a transition frequency (Ft) of 120 MHz and a maximum power dissipation of 800 mW, it offers reliable performance in demanding environments. The DC current gain (hFE) is a minimum of 70 at 10 mA and 5 V. Packaged in a TO-92MOD (TO-226-3, TO-92-3 Long Body) through-hole configuration, this transistor is suitable for use in consumer electronics, industrial automation, and telecommunications equipment. The operating temperature range extends up to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 1mA, 10A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 800 mW |
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