2SA2154CT-Y(TPL3)
TRANS PNP 50V 0.1A CST3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA2154CT-Y-TPL3-. This surface mount device, housed in a CST3 (SC-101, SOT-883) package, offers a 50V collector-emitter breakdown voltage and a 100mA maximum collector current. It features a transition frequency of 80MHz and a maximum power dissipation of 100mW. The device exhibits a typical Vce(sat) of 300mV at 10mA collector current and 10mA base current, with a minimum DC current gain (hFE) of 120 at 2mA collector current and 6V collector-emitter voltage. The 2SA2154CT-Y-TPL3- is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | CST3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
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