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2SA1972,T6WNLF(J

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2SA1972,T6WNLF(J

TRANS PNP 400V 0.5A TO92MOD

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage 2SA1972-T6WNLF-J is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device offers a 400V collector-emitter breakdown voltage and a maximum continuous collector current of 500mA. It features a transition frequency of 35MHz and a power dissipation of 900mW. The Toshiba 2SA1972-T6WNLF-J is housed in a TO-92MOD package with a through-hole mounting type. Key electrical characteristics include a minimum DC current gain (hFE) of 140 at 20mA and 5V, and a collector cutoff current (ICBO) of 10µA maximum. The saturation voltage (Vce Sat) is specified at 1V maximum for an base current of 10mA and collector current of 100mA. This component is commonly utilized in power supplies, audio amplifiers, and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 10mA, 100mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 20mA, 5V
Frequency - Transition35MHz
Supplier Device PackageTO-92MOD
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max900 mW

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