2SA1972,T6WNLF(J
TRANS PNP 400V 0.5A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage 2SA1972-T6WNLF-J is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device offers a 400V collector-emitter breakdown voltage and a maximum continuous collector current of 500mA. It features a transition frequency of 35MHz and a power dissipation of 900mW. The Toshiba 2SA1972-T6WNLF-J is housed in a TO-92MOD package with a through-hole mounting type. Key electrical characteristics include a minimum DC current gain (hFE) of 140 at 20mA and 5V, and a collector cutoff current (ICBO) of 10µA maximum. The saturation voltage (Vce Sat) is specified at 1V maximum for an base current of 10mA and collector current of 100mA. This component is commonly utilized in power supplies, audio amplifiers, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 20mA, 5V |
| Frequency - Transition | 35MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 900 mW |
Request a Quote
Clients Also Buy
2SA1162S-Y, LF(D
TRANS PNP 50V 0.15A SMINI
2SA1972,F(J
TRANS PNP 400V 0.5A TO92MOD
TTC009,F(J
TRANS NPN 80V 3A TO220NIS
