2SA1972,F(J
TRANS PNP 400V 0.5A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's 2SA1972-F-J is a PNP bipolar junction transistor designed for through-hole mounting. This component offers a 400V collector-emitter breakdown voltage and a maximum collector current of 500mA. It features a transition frequency of 35MHz and a maximum power dissipation of 900mW. The DC current gain (hFE) is a minimum of 140 at 20mA and 5V. The saturation voltage (Vce) is a maximum of 1V at 10mA and 100mA, with a collector cutoff current (ICBO) of 10µA. The operating junction temperature can reach 150°C. This transistor is supplied in a TO-92MOD package, also known as TO-226-3, TO-92-3 Long Body, and is available in bulk packaging. It finds application in various electronic systems including power supplies and general-purpose amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 20mA, 5V |
| Frequency - Transition | 35MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 900 mW |
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