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2SA1972,F(J

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2SA1972,F(J

TRANS PNP 400V 0.5A TO92MOD

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage's 2SA1972-F-J is a PNP bipolar junction transistor designed for through-hole mounting. This component offers a 400V collector-emitter breakdown voltage and a maximum collector current of 500mA. It features a transition frequency of 35MHz and a maximum power dissipation of 900mW. The DC current gain (hFE) is a minimum of 140 at 20mA and 5V. The saturation voltage (Vce) is a maximum of 1V at 10mA and 100mA, with a collector cutoff current (ICBO) of 10µA. The operating junction temperature can reach 150°C. This transistor is supplied in a TO-92MOD package, also known as TO-226-3, TO-92-3 Long Body, and is available in bulk packaging. It finds application in various electronic systems including power supplies and general-purpose amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 10mA, 100mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 20mA, 5V
Frequency - Transition35MHz
Supplier Device PackageTO-92MOD
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max900 mW

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