2SA1955FVBTPL3Z
TRANS PNP 12V 0.4A VESMManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's 2SA1955FVBTPL3Z is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 400mA. With a transition frequency of 130MHz and a power dissipation of 100mW, it offers robust performance for demanding applications. The device exhibits a minimum DC current gain (hFE) of 300 at 10mA and 2V, and a saturation voltage (Vce(sat)) of 250mV at 10mA collector current and 200mA base current. The 2SA1955FVBTPL3Z is supplied in a VESM package, presented on tape and reel for automated assembly. It is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | VESM |
| Current - Collector (Ic) (Max) | 400 mA |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 100 mW |
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