2SA1955FVATPL3Z
TRANS PNP 12V 0.4A CST3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's 2SA1955FVATPL3Z is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 12V and a continuous collector current capability of up to 400mA. The transistor exhibits a minimum DC current gain (hFE) of 300 at 10mA and 2V, with a transition frequency of 130MHz. Maximum power dissipation is rated at 100mW. The saturation voltage (Vce(sat)) is a maximum of 250mV at 10mA base current and 200mA collector current. The device is supplied in a CST3 package, equivalent to SC-101 or SOT-883, and is provided on a Tape & Reel (TR) for automated assembly. This transistor is suitable for use in various consumer electronics and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | CST3 |
| Current - Collector (Ic) (Max) | 400 mA |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 100 mW |
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