2SA1954BTE85LF
TRANS PNP 12V 0.5A SC70Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA1954BTE85LF. This device features a 12V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 130MHz and a power dissipation of 100mW, it is suitable for general-purpose amplification and switching applications. The DC current gain (hFE) is a minimum of 500 at 10mA collector current and 2V Vce. Collector cutoff current (ICBO) is specified at 100nA maximum. The device is provided in a surface mount SC-70 package, supplied on tape and reel. Typical saturation voltage (Vce(sat)) is 250mV at 10mA base current and 200mA collector current. This component finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 125°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | SC-70 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 100 mW |
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