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2SA1954BTE85LF

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2SA1954BTE85LF

TRANS PNP 12V 0.5A SC70

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA1954BTE85LF. This device features a 12V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 130MHz and a power dissipation of 100mW, it is suitable for general-purpose amplification and switching applications. The DC current gain (hFE) is a minimum of 500 at 10mA collector current and 2V Vce. Collector cutoff current (ICBO) is specified at 100nA maximum. The device is provided in a surface mount SC-70 package, supplied on tape and reel. Typical saturation voltage (Vce(sat)) is 250mV at 10mA base current and 200mA collector current. This component finds application in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature125°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 10mA, 2V
Frequency - Transition130MHz
Supplier Device PackageSC-70
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)12 V
Power - Max100 mW

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