2SA1954-A(TE85L,F)
TRANS PNP 12V 0.5A SC70Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA1954-A-TE85L-F-, offers a 12V collector-emitter breakdown voltage and a maximum collector current of 500mA. This device features a transition frequency of 130MHz and a power dissipation of 100mW. Designed for surface mount applications, it is supplied in an SC-70 (SOT-323) package on tape and reel. Key parameters include a minimum DC current gain (hFE) of 300 at 10mA, 2V, and a low collector cutoff current of 100nA (ICBO). The saturation voltage (Vce(sat)) is a maximum of 250mV at 10mA, 200mA. Operating temperature range extends to 125°C. This component is utilized in various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 125°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | SC-70 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 100 mW |
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