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2SA1954-A(TE85L,F)

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2SA1954-A(TE85L,F)

TRANS PNP 12V 0.5A SC70

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA1954-A-TE85L-F-, offers a 12V collector-emitter breakdown voltage and a maximum collector current of 500mA. This device features a transition frequency of 130MHz and a power dissipation of 100mW. Designed for surface mount applications, it is supplied in an SC-70 (SOT-323) package on tape and reel. Key parameters include a minimum DC current gain (hFE) of 300 at 10mA, 2V, and a low collector cutoff current of 100nA (ICBO). The saturation voltage (Vce(sat)) is a maximum of 250mV at 10mA, 200mA. Operating temperature range extends to 125°C. This component is utilized in various industrial and consumer electronics applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature125°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA, 2V
Frequency - Transition130MHz
Supplier Device PackageSC-70
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)12 V
Power - Max100 mW

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