2SA1931,SINFQ(J
TRANS PNP 50V 5A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor (BJT), part number 2SA1931-SINFQ-J. This device features a 50V collector-emitter breakdown voltage and a continuous collector current rating of 5A, with a maximum power dissipation of 2W. The transistor exhibits a transition frequency of 60MHz and a minimum DC current gain (hFE) of 100 at 1A, 1V. Saturation voltage (Vce(sat)) is specified at 400mV maximum for an Ic of 2A and Ib of 200mA. It is housed in a TO-220NIS package suitable for through-hole mounting. Applications include power switching and amplification in various industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 2 W |
Request a Quote
Clients Also Buy
2SA1162S-Y, LF(D
TRANS PNP 50V 0.15A SMINI
2SA1972,F(J
TRANS PNP 400V 0.5A TO92MOD
TTC009,F(J
TRANS NPN 80V 3A TO220NIS
