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2SA1931,Q(J

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2SA1931,Q(J

TRANS PNP 50V 5A TO220NIS

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage 2SA1931-Q-J is a PNP bipolar junction transistor designed for through-hole mounting in a TO-220NIS package. This device offers a collector current rating of 5A and a collector-emitter breakdown voltage of 50V. It features a transition frequency of 60MHz and a maximum power dissipation of 2W. The minimum DC current gain (hFE) is specified as 100 at 1A and 1V. The collector cutoff current (ICBO) is a maximum of 1µA. Saturation voltage (Vce(sat)) is a maximum of 400mV at 200mA and 2A. This component is suitable for applications in power switching and general-purpose amplification across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 200mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 1V
Frequency - Transition60MHz
Supplier Device PackageTO-220NIS
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max2 W

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