2SA1931,Q(J
TRANS PNP 50V 5A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage 2SA1931-Q-J is a PNP bipolar junction transistor designed for through-hole mounting in a TO-220NIS package. This device offers a collector current rating of 5A and a collector-emitter breakdown voltage of 50V. It features a transition frequency of 60MHz and a maximum power dissipation of 2W. The minimum DC current gain (hFE) is specified as 100 at 1A and 1V. The collector cutoff current (ICBO) is a maximum of 1µA. Saturation voltage (Vce(sat)) is a maximum of 400mV at 200mA and 2A. This component is suitable for applications in power switching and general-purpose amplification across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 2 W |
Request a Quote
Clients Also Buy
2SA1162S-Y, LF(D
TRANS PNP 50V 0.15A SMINI
2SA1972,F(J
TRANS PNP 400V 0.5A TO92MOD
TTC009,F(J
TRANS NPN 80V 3A TO220NIS
