2SA1931,NSEIKIQ(J
TRANS PNP 50V 5A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's 2SA1931-NSEIKIQ-J is a PNP bipolar junction transistor designed for robust performance. This component offers a Collector Current (Ic) of up to 5 A and a Collector-Emitter Breakdown Voltage (Vce) of 50 V. It features a transition frequency of 60 MHz and a maximum power dissipation of 2 W. The DC current gain (hFE) is a minimum of 100 at 1 A and 1 V. The transistor exhibits a Vce(sat) of 400 mV at 200 mA and 2 A. Packaged in a TO-220NIS (TO-220-3 Full Pack) with a through-hole mounting type, this device operates at junction temperatures up to 150°C. Applications for this transistor are found in industrial, automotive, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 2 W |
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