2SA1931,NIKKIQ(J
TRANS PNP 50V 5A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage 2SA1931-NIKKIQ-J is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 50V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 5A. The transition frequency (fT) is rated at 60MHz, facilitating efficient operation in various signal processing circuits. With a maximum power dissipation of 2W and a junction temperature capability of 150°C, it ensures reliable performance in demanding environments. The DC current gain (hFE) is a minimum of 100 at 1A and 1V, and the saturation voltage (Vce(sat)) is a maximum of 400mV at 200mA and 2A. This device is supplied in a TO-220NIS package, suitable for through-hole mounting. It finds application in power supplies, audio amplifiers, and general industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 2 W |
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