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2SA1931,NETQ(J

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2SA1931,NETQ(J

TRANS PNP 50V 5A TO220NIS

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage 2SA1931-NETQ-J is a PNP bipolar junction transistor designed for power switching and amplification applications. This device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 5A, with a power dissipation of 2W. The transistor exhibits a transition frequency of 60MHz and a minimum DC current gain (hFE) of 100 at 1A and 1V. Saturation voltage (Vce) is specified at 400mV maximum for a collector current of 2A driven by 200mA of base current. The 2SA1931-NETQ-J is housed in a TO-220NIS package, suitable for through-hole mounting. This component finds application in industrial automation, consumer electronics, and power supply circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 200mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 1V
Frequency - Transition60MHz
Supplier Device PackageTO-220NIS
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max2 W

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