2SA1931,NETQ(J
TRANS PNP 50V 5A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage 2SA1931-NETQ-J is a PNP bipolar junction transistor designed for power switching and amplification applications. This device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 5A, with a power dissipation of 2W. The transistor exhibits a transition frequency of 60MHz and a minimum DC current gain (hFE) of 100 at 1A and 1V. Saturation voltage (Vce) is specified at 400mV maximum for a collector current of 2A driven by 200mA of base current. The 2SA1931-NETQ-J is housed in a TO-220NIS package, suitable for through-hole mounting. This component finds application in industrial automation, consumer electronics, and power supply circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 2 W |
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