2SA1931,KEHINQ(M
TRANS PNP 50V 5A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA1931-KEHINQ-M. This through-hole component features a 50V collector-emitter breakdown voltage and a maximum collector current of 5A. The transistor offers a minimum DC current gain (hFE) of 100 at 1A and 1V, with a transition frequency of 60MHz. It is rated for a maximum power dissipation of 2W and operates at temperatures up to 150°C. The saturation voltage (Vce Sat) is a maximum of 400mV at 200mA collector current and 2A base current. The collector cutoff current (ICBO) is a maximum of 1µA. Packaged in a TO-220NIS (TO-220-3 Full Pack), this device is suitable for applications in power switching, audio amplification, and general-purpose amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 2 W |
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