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2SA1931,BOSCHQ(J

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2SA1931,BOSCHQ(J

TRANS PNP 50V 5A TO220NIS

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA1931-BOSCHQ-J. This through-hole component is housed in a TO-220NIS package. It features a collector current (Ic) of up to 5 A and a collector-emitter breakdown voltage (Vce) of 50 V. The transistor exhibits a transition frequency (fT) of 60 MHz and a maximum power dissipation of 2 W. Key parameters include a minimum DC current gain (hFE) of 100 at 1 A and 1 V, and a saturation voltage (Vce(sat)) of 400 mV at 200 mA and 2 A. The maximum collector cutoff current (Icbo) is 1 µA. Operating temperature range is up to 150°C. This component is commonly utilized in power supply circuits, audio amplification, and general-purpose switching applications within the industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 200mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 1V
Frequency - Transition60MHz
Supplier Device PackageTO-220NIS
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max2 W

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