2SA1931,BOSCHQ(J
TRANS PNP 50V 5A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA1931-BOSCHQ-J. This through-hole component is housed in a TO-220NIS package. It features a collector current (Ic) of up to 5 A and a collector-emitter breakdown voltage (Vce) of 50 V. The transistor exhibits a transition frequency (fT) of 60 MHz and a maximum power dissipation of 2 W. Key parameters include a minimum DC current gain (hFE) of 100 at 1 A and 1 V, and a saturation voltage (Vce(sat)) of 400 mV at 200 mA and 2 A. The maximum collector cutoff current (Icbo) is 1 µA. Operating temperature range is up to 150°C. This component is commonly utilized in power supply circuits, audio amplification, and general-purpose switching applications within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 2 W |
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