2SA1930(Q,M)
TRANS PNP 180V 2A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's 2SA1930-Q-M- is a PNP bipolar junction transistor designed for robust performance. This through-hole component features a 180V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 200MHz and a power dissipation of 2W, it is suitable for applications requiring efficient amplification and switching. Key specifications include a minimum DC current gain (hFE) of 100 at 100mA and 5V, and a Vce(sat) of 1V at 100mA and 1A. The transistor operates at temperatures up to 150°C (TJ) and is packaged in a TO-220NIS (TO-220-3 Full Pack) for ease of integration into various electronic systems. This component finds use in power supply circuits, audio amplifiers, and general-purpose switching applications within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 180 V |
| Power - Max | 2 W |
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