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2SA1930(Q,M)

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2SA1930(Q,M)

TRANS PNP 180V 2A TO220NIS

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage's 2SA1930-Q-M- is a PNP bipolar junction transistor designed for robust performance. This through-hole component features a 180V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 200MHz and a power dissipation of 2W, it is suitable for applications requiring efficient amplification and switching. Key specifications include a minimum DC current gain (hFE) of 100 at 100mA and 5V, and a Vce(sat) of 1V at 100mA and 1A. The transistor operates at temperatures up to 150°C (TJ) and is packaged in a TO-220NIS (TO-220-3 Full Pack) for ease of integration into various electronic systems. This component finds use in power supply circuits, audio amplifiers, and general-purpose switching applications within the consumer electronics and industrial automation sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Frequency - Transition200MHz
Supplier Device PackageTO-220NIS
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)180 V
Power - Max2 W

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