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2SA1930(LBS2MATQ,M

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2SA1930(LBS2MATQ,M

TRANS PNP 180V 2A TO220NIS

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage 2SA1930-LBS2MATQ-M is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. Featuring a collector current rating of 2A and a collector-emitter breakdown voltage of 180V, this device offers a transition frequency of 200MHz. It provides a minimum DC current gain (hFE) of 100 at 100mA and 5V. The transistor dissipates a maximum power of 2W and operates at junction temperatures up to 150°C. Housed in a TO-220NIS package for through-hole mounting, the 2SA1930-LBS2MATQ-M is suitable for power supply circuits, switching applications, and general amplification in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Frequency - Transition200MHz
Supplier Device PackageTO-220NIS
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)180 V
Power - Max2 W

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