2SA1930(LBS2MATQ,M
TRANS PNP 180V 2A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage 2SA1930-LBS2MATQ-M is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. Featuring a collector current rating of 2A and a collector-emitter breakdown voltage of 180V, this device offers a transition frequency of 200MHz. It provides a minimum DC current gain (hFE) of 100 at 100mA and 5V. The transistor dissipates a maximum power of 2W and operates at junction temperatures up to 150°C. Housed in a TO-220NIS package for through-hole mounting, the 2SA1930-LBS2MATQ-M is suitable for power supply circuits, switching applications, and general amplification in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 180 V |
| Power - Max | 2 W |
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