2SA1930,CKQ(J
TRANS PNP 180V 2A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's 2SA1930-CKQ-J is a PNP bipolar junction transistor designed for high voltage applications. This through-hole component features a maximum collector current (Ic) of 2 A and a collector-emitter breakdown voltage (Vce) of 180 V. With a transition frequency of 200 MHz and a maximum power dissipation of 2 W, it offers robust performance. The DC current gain (hFE) is a minimum of 100 at 100 mA and 5 V. Operating up to a junction temperature of 150°C, the device is housed in a TO-220NIS package. This transistor is suitable for use in power supply circuits, audio amplifiers, and general-purpose switching applications across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 180 V |
| Power - Max | 2 W |
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