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2SA1761,T6F(M

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2SA1761,T6F(M

TRANS PNP 50V 3A TO92MOD

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage's 2SA1761-T6F-M is a PNP bipolar junction transistor (BJT) suitable for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 3A. With a transition frequency of 100MHz, it is well-suited for mid-frequency circuits. The device features a minimum DC current gain (hFE) of 120 at 100mA and 2V. Maximum power dissipation is rated at 900mW. The 2SA1761-T6F-M is housed in a TO-92MOD package for through-hole mounting. Its operational temperature range extends to 150°C. This transistor finds utility in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 2V
Frequency - Transition100MHz
Supplier Device PackageTO-92MOD
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max900 mW

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