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2SA1721OTE85LF

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2SA1721OTE85LF

TRANS PNP 300V 0.1A SMINI

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor (BJT), part number 2SA1721OTE85LF. This device features a 300V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a transition frequency of 50MHz and a power dissipation of 150mW. The transistor type is PNP, with a minimum DC current gain (hFE) of 30 at 20mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified as a maximum of 500mV at 2mA base current and 20mA collector current. The device operates at temperatures up to 150°C (TJ). It is supplied in an S-Mini package (TO-236-3, SC-59, SOT-23-3) and is available on Tape & Reel (TR). This component is suitable for applications in general-purpose amplification and switching circuits across various electronics industries.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 40 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 10V
Frequency - Transition50MHz
Supplier Device PackageS-Mini
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max150 mW

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Toshiba Semiconductor and Storage - 2SA1721OTE85LF - Microchip USA