2SA1721OTE85LF
TRANS PNP 300V 0.1A SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor (BJT), part number 2SA1721OTE85LF. This device features a 300V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a transition frequency of 50MHz and a power dissipation of 150mW. The transistor type is PNP, with a minimum DC current gain (hFE) of 30 at 20mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified as a maximum of 500mV at 2mA base current and 20mA collector current. The device operates at temperatures up to 150°C (TJ). It is supplied in an S-Mini package (TO-236-3, SC-59, SOT-23-3) and is available on Tape & Reel (TR). This component is suitable for applications in general-purpose amplification and switching circuits across various electronics industries.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 40 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | S-Mini |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 150 mW |
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