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2SA1162S-GR,LF(D

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2SA1162S-GR,LF(D

TRANS PNP 50V 0.15A SMINI

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage 2SA1162S-GR-LF-D is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 150mA. It features a transition frequency of 80MHz and a maximum power dissipation of 150mW. The S-Mini package, equivalent to TO-236-3, SC-59, or SOT-23-3, is supplied in tape and reel. Key parameters include a minimum DC current gain (hFE) of 70 at 2mA/6V and a collector cutoff current (ICBO) of 100nA. The Vce(sat) is specified at 300mV for 10mA base current and 100mA collector current. This transistor is suitable for various applications in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 16 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature125°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2mA, 6V
Frequency - Transition80MHz
Supplier Device PackageS-Mini
Current - Collector (Ic) (Max)150 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW

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