2SA1162S-GR,LF(D
TRANS PNP 50V 0.15A SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage 2SA1162S-GR-LF-D is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 150mA. It features a transition frequency of 80MHz and a maximum power dissipation of 150mW. The S-Mini package, equivalent to TO-236-3, SC-59, or SOT-23-3, is supplied in tape and reel. Key parameters include a minimum DC current gain (hFE) of 70 at 2mA/6V and a collector cutoff current (ICBO) of 100nA. The Vce(sat) is specified at 300mV for 10mA base current and 100mA collector current. This transistor is suitable for various applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 125°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | S-Mini |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
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