2SA1020A,NSEIKIF(J
TRANS PNP 50V 2A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's 2SA1020A-NSEIKIF-J is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a maximum collector current (Ic) of 2A and a collector-emitter breakdown voltage (Vce(max)) of 50V. With a transition frequency (fT) of 100MHz and a maximum power dissipation of 900mW, it offers robust performance. The device exhibits a minimum DC current gain (hFE) of 70 at 500mA and 2V, and a saturation voltage (Vce(sat)) of 500mV at 50mA and 1A. Packaged in a TO-92MOD configuration, it operates at junction temperatures up to 150°C. This transistor is commonly employed in consumer electronics, industrial control systems, and automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 900 mW |
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