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2SA1020-Y(T6TOJ,FM

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2SA1020-Y(T6TOJ,FM

TRANS PNP 50V 2A TO92MOD

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA1020-Y-T6TOJ-FM. This through-hole component is housed in a TO-92MOD package. It features a 50V collector-emitter breakdown voltage and a maximum collector current of 2A. The device offers a transition frequency of 100MHz and a maximum power dissipation of 900mW. Its DC current gain (hFE) is a minimum of 70 at 500mA and 2V. The collector cutoff current (ICBO) is specified at 1µA. Vce saturation is a maximum of 500mV at 50mA and 1A. This transistor is suitable for applications in consumer electronics and general-purpose amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 1A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 2V
Frequency - Transition100MHz
Supplier Device PackageTO-92MOD
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max900 mW

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