2SA1020-Y(T6FJT,AF
TRANS PNP 50V 2A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA1020-Y-T6FJT-AF. This through-hole device is housed in a TO-92MOD package and operates with a collector-emitter breakdown voltage of 50V and a continuous collector current of up to 2A. Featuring a transition frequency of 100MHz and a maximum power dissipation of 900mW, it exhibits a minimum DC current gain (hFE) of 70 at 500mA and 2V. Saturation voltage is specified at a maximum of 500mV for 50mA base current and 1A collector current. The device has a maximum collector cutoff current of 1µA (ICBO) and an operating junction temperature of 150°C. This component is commonly utilized in industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 900 mW |
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