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2SA1020-Y,T6F(J

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2SA1020-Y,T6F(J

TRANS PNP 50V 2A TO92MOD

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Toshiba Semiconductor and Storage 2SA1020-Y-T6F-J is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 2A. With a transition frequency of 100MHz and power dissipation of 900mW, it is suitable for use in consumer electronics, industrial control systems, and automotive applications. The device offers a minimum DC current gain (hFE) of 70 at 500mA collector current and 2V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 500mV at 50mA base current and 1A collector current. Packaged in a TO-92MOD (TO-226-3, TO-92-3 Long Body) for through-hole mounting, this transistor operates at junction temperatures up to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 1A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 2V
Frequency - Transition100MHz
Supplier Device PackageTO-92MOD
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max900 mW

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