Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

2SA1020-Y(T6CANOFM

Banner
productimage

2SA1020-Y(T6CANOFM

TRANS PNP 50V 2A TO92MOD

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage's 2SA1020-Y-T6CANOFM is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 2A. With a transition frequency of 100MHz and a maximum power dissipation of 900mW, it is suitable for use in consumer electronics, industrial control systems, and automotive applications. The transistor features a minimum DC current gain (hFE) of 70 at 500mA and 2V, and a collector-emitter saturation voltage of 500mV at 50mA and 1A. It is supplied in a TO-92MOD package for through-hole mounting.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 1A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 2V
Frequency - Transition100MHz
Supplier Device PackageTO-92MOD
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max900 mW

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
2SA1162S-Y, LF(D

TRANS PNP 50V 0.15A SMINI

product image
TTC009,F(J

TRANS NPN 80V 3A TO220NIS

product image
2SA965-Y,T6F(J

TRANS PNP 120V 0.8A TO92MOD