2SA1020-Y(6MBH1,AF
TRANS PNP 50V 2A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA1020-Y-6MBH1-AF. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 100MHz and a power dissipation of 900mW, it is suitable for applications requiring moderate power handling and switching speeds. The minimum DC current gain (hFE) is specified at 70 at 500mA and 2V. Saturation voltage (Vce) is a maximum of 500mV at 50mA and 1A. This component is supplied in a TO-92MOD package for through-hole mounting. It operates at junction temperatures up to 150°C. Typical applications include general-purpose amplification and switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 900 mW |
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