2SA1020-O(TE6,F,M)
TRANS PNP 50V 2A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA1020-O-TE6-F-M-. This through-hole device features a 50V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 100MHz and a power dissipation of 900mW, it is suitable for applications requiring moderate current handling and switching speeds. The minimum DC current gain (hFE) is 70 at 500mA and 2V. The saturation voltage (Vce(sat)) is a maximum of 500mV at 50mA base current and 1A collector current. Collector cutoff current (ICBO) is specified at 1µA. This component is housed in a TO-92MOD package. It finds application in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 900 mW |
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