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2SA1020-O(F,M)

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2SA1020-O(F,M)

TRANS PNP 50V 2A TO92MOD

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage's 2SA1020-O-F-M- is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 2A, with a maximum collector power dissipation of 900mW. The transistor exhibits a transition frequency of 100MHz and a minimum DC current gain (hFE) of 70 at 500mA and 2V. The saturation voltage at 50mA base current and 1A collector current is 500mV. It is supplied in a TO-92MOD package suitable for through-hole mounting and operates at junction temperatures up to 150°C. Applications include power supply circuits, audio amplifiers, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 1A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 2V
Frequency - Transition100MHz
Supplier Device PackageTO-92MOD
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max900 mW

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