2SA1013-O,T6MIBF(J
TRANS PNP 160V 1A TO92LManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage presents the 2SA1013-O-T6MIBF-J, a PNP bipolar junction transistor designed for demanding applications. This component features a maximum collector current of 1 Ampere and a collector-emitter breakdown voltage of 160 Volts. With a transition frequency of 50 MHz and a maximum power dissipation of 900 mW, it is well-suited for use in power supply circuits, audio amplifiers, and general-purpose switching applications. The device operates within a junction temperature range of -55°C to 150°C and is housed in a TO-92L package for through-hole mounting. The DC current gain (hFE) is specified at a minimum of 60 at 200mA collector current and 5V collector-emitter voltage. Characteristics such as a collector cutoff current (ICBO) of 1µA and a Vce(sat) of 1.5V at 50mA base current and 500mA collector current are also noted.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 200mA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92L |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 900 mW |
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