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2SA1013-O,T6MIBF(J

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2SA1013-O,T6MIBF(J

TRANS PNP 160V 1A TO92L

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage presents the 2SA1013-O-T6MIBF-J, a PNP bipolar junction transistor designed for demanding applications. This component features a maximum collector current of 1 Ampere and a collector-emitter breakdown voltage of 160 Volts. With a transition frequency of 50 MHz and a maximum power dissipation of 900 mW, it is well-suited for use in power supply circuits, audio amplifiers, and general-purpose switching applications. The device operates within a junction temperature range of -55°C to 150°C and is housed in a TO-92L package for through-hole mounting. The DC current gain (hFE) is specified at a minimum of 60 at 200mA collector current and 5V collector-emitter voltage. Characteristics such as a collector cutoff current (ICBO) of 1µA and a Vce(sat) of 1.5V at 50mA base current and 500mA collector current are also noted.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 200mA, 5V
Frequency - Transition50MHz
Supplier Device PackageTO-92L
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max900 mW

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