RFM01U7P(TE12L,F)
RF MOSFET 7.2V PW-MINIManufacturer: Toshiba Semiconductor and Storage
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage RFM01U7P-TE12L-F- is an N-channel RF MOSFET designed for high-frequency applications. This component, housed in a TO-243AA (PW-MINI) package, operates at a drain-source voltage (VDS) of 20V and is specified with a test voltage of 7.2V. It delivers a power output of 1.2W and a gain of 10.8dB at a frequency of 520MHz. The device supports a continuous drain current of 100mA under test conditions, with a rated current of 1A. This surface-mount component is supplied on tape and reel, making it suitable for automated assembly processes in sectors such as wireless communication systems and RF power amplification.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 52 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Current Rating (Amps) | 1A |
| Mounting Type | Surface Mount |
| Frequency | 520MHz |
| Configuration | N-Channel |
| Power - Output | 1.2W |
| Gain | 10.8dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | - |
| Supplier Device Package | PW-MINI |
| Voltage - Rated | 20 V |
| Voltage - Test | 7.2 V |
| Current - Test | 100 mA |
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