3SK294(TE85L,F)
RF MOSFET 6V USQManufacturer: Toshiba Semiconductor and Storage
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's 3SK294-TE85L-F- is an RF MOSFET designed for demanding high-frequency applications. This N-Channel device operates with a gate-source voltage of 6V at a drain current of 10mA, delivering a gain of 26dB at 500MHz. Engineered for surface mount integration, it is supplied in a compact USQ package, specifically the SC-82A, SOT-343 format on tape and reel. The device exhibits a noise figure of 1.4dB and a rated voltage of 12.5V, making it suitable for use in wireless communication systems and other RF front-end circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 500MHz |
| Configuration | N-Channel |
| Power - Output | - |
| Gain | 26dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.4dB |
| Supplier Device Package | USQ |
| Voltage - Rated | 12.5 V |
| Voltage - Test | 6 V |
| Current - Test | 10 mA |
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