3SK291(TE85L,F)
RF MOSFET 6V SMQManufacturer: Toshiba Semiconductor and Storage
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage, RF MOSFET, 3SK291-TE85L-F. This N-Channel dual-gate RF MOSFET is designed for high-frequency applications. Featuring a 6V test voltage and 10mA test current, it achieves a gain of 22.5dB at 800MHz. The device offers a low noise figure of 2.5dB and is supplied in an SMQ package for surface mounting, presented on tape and reel (TR). Its operational characteristics make it suitable for use in wireless communication systems and RF front-end modules. The rated voltage is 12.5V, with a current rating of 30mA.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-61AA |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 22.5dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 2.5dB |
| Supplier Device Package | SMQ |
| Voltage - Rated | 12.5 V |
| Voltage - Test | 6 V |
| Current - Test | 10 mA |
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