TPCP8203(TE85L,F)
MOSFET 2N-CH 40V 4.7A PS-8Manufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage TPCP8203-TE85L-F- is a 2 N-channel MOSFET array designed for high-density power applications. This device features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.7A at 25°C. The TPCP8203-TE85L-F- is housed in a compact PS-8 (2.9x2.4) surface mount package, suitable for space-constrained designs. Its maximum power dissipation is 360mW, and it operates at temperatures up to 150°C (TJ). The device is supplied in tape and reel packaging. This MOSFET array finds application in power management units, battery charging circuits, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 360mW |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | PS-8 (2.9x2.4) |
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