TPCF8402(TE85L,F,M
MOSFET N/P-CH 30V 4A/3.2A VS-8Manufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage TPCF8402-TE85L-F-M is a MOSFET array featuring complementary N-channel and P-channel devices. This component offers a Drain-to-Source Voltage (Vdss) of 30V and continuous drain currents of 4A for the N-channel and 3.2A for the P-channel, respectively, at 25°C. The array is designed with a logic-level gate, enabling operation with lower gate drive voltages. Key parameters include a maximum power dissipation of 330mW, a gate charge (Qg) of 10nC at 10V, and input capacitance (Ciss) of 470pF at 10V. The on-resistance (Rds On) is a maximum of 50mOhm at 2A and 10V. Packaged in a VS-8 (2.9x1.5) surface-mount configuration on tape and reel, the TPCF8402-TE85L-F-M operates across an extended temperature range up to 150°C. This device finds application in power management solutions within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 330mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A, 3.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | VS-8 (2.9x1.5) |