TPCF8304(TE85L,F,M
MOSFET 2P-CH 30V 3.2A VS-8Manufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Toshiba Semiconductor and Storage TPCF8304-TE85L-F-M is a dual P-channel MOSFET array designed for surface mount applications. This component features a 30V drain-source voltage (Vdss) rating and supports a continuous drain current (Id) of 3.2A at 25°C. The MOSFET array offers a low on-resistance (Rds On) of 72mOhm maximum at 1.6A and 10V, with a logic level gate for enhanced compatibility. Key electrical characteristics include a gate charge (Qg) of 14nC maximum at 10V and input capacitance (Ciss) of 600pF maximum at 10V. The device is packaged in a VS-8 (2.9x1.5) 8-SMD, flat leads configuration and operates within a temperature range of -55°C to 150°C (TJ). The TPCF8304-TE85L-F-M is supplied on tape and reel (TR) and has a maximum power dissipation of 330mW. Its specifications make it suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 330mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 1.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Supplier Device Package | VS-8 (2.9x1.5) |
Request a Quote
Clients Also Buy
SSM6N57NU,LF
MOSFET 2N-CH 30V 4A 6DFN
SSM6P54TU,LF
MOSFET 2P-CH 20V 1.2A UF6
SSM6N48FU,RF(D
MOSFET 2N-CH 30V 0.1A US6
