TPCF8201(TE85L,F,M
MOSFET 2N-CH 20V 3A VS-8Manufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage TPCF8201-TE85L-F-M is a dual N-channel MOSFET array designed for surface mount applications within the VS-8 package. This device offers a 20V drain-source voltage and a continuous drain current capability of 3A at 25°C. Featuring a logic-level gate, it exhibits a maximum Rds(On) of 49mOhm at 1.5A and 4.5V, with a maximum gate charge of 7.5nC at 5V. The input capacitance (Ciss) is specified at a maximum of 590pF at 10V. With a maximum power dissipation of 330mW and an operating junction temperature of 150°C, this MOSFET array is suitable for power management applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 330mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 10V |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 1.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | VS-8 (2.9x1.5) |
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