TPC8407,LQ(S
MOSFET N/P-CH 30V 9A/7.4A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage TPC8407-LQ-S is a MOSFET array featuring both N-channel and P-channel configurations. This component offers a drain-to-source voltage (Vdss) of 30V with continuous drain currents (Id) of 9A for the N-channel and 7.4A for the P-channel at 25°C. Optimized for surface mounting in an 8-SOP package, it operates with a logic level gate and has a maximum power dissipation of 450mW. Key electrical parameters include a low Rds On of 17mOhm at 4.5A and 10V, a gate charge (Qg) of 17nC maximum at 10V, and an input capacitance (Ciss) of 1190pF maximum at 10V. This device is suitable for applications in automotive and industrial power management systems. The component is supplied in Tape & Reel packaging for high-volume manufacturing.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 450mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A, 7.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | 8-SOP |