TPC8405(TE12L,Q,M)
MOSFET N/P-CH 30V 6A/4.5A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC8405-TE12L-Q-M- is a dual MOSFET array featuring N-channel and P-channel devices in an 8-SOP package. This surface-mount component offers a continuous drain current of 6A for the N-channel and 4.5A for the P-channel, both at 25°C. The drain-to-source voltage (Vdss) is rated at 30V, with a maximum power dissipation of 450mW. The MOSFET array is designed with logic-level gate functionality, indicated by a Vgs(th) of 2V @ 1mA. Key electrical parameters include a maximum Rds On of 26mOhm @ 3A, 10V, input capacitance (Ciss) of 1240pF @ 10V, and gate charge (Qg) of 27nC @ 10V. Operating temperature range extends to 150°C (TJ). This component is suitable for applications in consumer electronics and power management systems. The product is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 450mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 10V |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
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