TPC8223-H,LQ(S
MOSFET 2N-CH 30V 9A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage TPC8223-H-LQ-S is a dual N-channel MOSFET array designed for demanding applications. This 8-SOP packaged device features a 30V drain-source voltage rating and a continuous drain current capability of 9A at 25°C. Optimized for efficiency, it offers a low on-resistance of 17mOhm at 4.5A and 10V, coupled with a logic level gate for enhanced control. The MOSFET array boasts a maximum power dissipation of 450mW and an operating junction temperature of 150°C. Key electrical characteristics include a gate charge of 17nC (max) at 10V and input capacitance of 1190pF (max) at 10V. This component is commonly utilized in power management, automotive, and industrial control systems. The TPC8223-H-LQ-S is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 450mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | 8-SOP |