TPC8221-H,LQ(S
MOSFET 2N-CH 30V 6A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage TPC8221-H-LQ-S is a dual N-channel MOSFET array designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 6A at 25°C. The TPC8221-H-LQ-S offers a low on-resistance (Rds On) of 25mOhm at 3A and 10V, with a maximum power dissipation of 450mW. Key electrical characteristics include a gate charge (Qg) of 12nC (max) at 10V and input capacitance (Ciss) of 830pF (max) at 10V. The threshold voltage (Vgs(th)) is 2.3V (max) at 100µA. Packaged in an 8-SOP (8-SOIC) configuration and supplied on tape and reel, this MOSFET array is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 450mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | 8-SOP |