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TPC8213-H(TE12LQ,M

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TPC8213-H(TE12LQ,M

MOSFET 2N-CH 60V 5A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Toshiba Semiconductor and Storage TPC8213-H-TE12LQ-M is a dual N-channel MOSFET array designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 5A at 25°C. The MOSFET array offers a low Rds On of 50mOhm at 2.5A and 10V, coupled with a logic-level gate for enhanced drive efficiency. Key parameters include a maximum power dissipation of 450mW, a gate charge (Qg) of 11nC at 10V, and an input capacitance (Ciss) of 625pF at 10V. The device operates across a wide temperature range, up to 150°C (TJ). Packaged in an 8-SOP (5.5x6.0) configuration and supplied on tape and reel (TR), the TPC8213-H-TE12LQ-M is suitable for use in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 18 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max450mW
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5A
Input Capacitance (Ciss) (Max) @ Vds625pF @ 10V
Rds On (Max) @ Id, Vgs50mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.3V @ 1mA
Supplier Device Package8-SOP (5.5x6.0)

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