TPC8213-H(TE12LQ,M
MOSFET 2N-CH 60V 5A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage TPC8213-H-TE12LQ-M is a dual N-channel MOSFET array designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 5A at 25°C. The MOSFET array offers a low Rds On of 50mOhm at 2.5A and 10V, coupled with a logic-level gate for enhanced drive efficiency. Key parameters include a maximum power dissipation of 450mW, a gate charge (Qg) of 11nC at 10V, and an input capacitance (Ciss) of 625pF at 10V. The device operates across a wide temperature range, up to 150°C (TJ). Packaged in an 8-SOP (5.5x6.0) configuration and supplied on tape and reel (TR), the TPC8213-H-TE12LQ-M is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 450mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
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