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TPC8212-H(TE12LQ,M

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TPC8212-H(TE12LQ,M

MOSFET 2N-CH 30V 6A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Toshiba Semiconductor and Storage TPC8212-H-TE12LQ-M is a dual N-channel MOSFET array designed for surface mount applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6A at 25°C. The MOSFET array offers a low on-resistance (Rds On) of 21mOhm at 3A, 10V, and incorporates logic level gate functionality. Key parameters include a gate charge (Qg) of 16nC (max) at 10V and input capacitance (Ciss) of 840pF (max) at 10V. With a maximum power dissipation of 450mW and an operating temperature of 150°C, this component is suitable for use in automotive and industrial power management applications. It is supplied in an 8-SOP (5.5x6.0) package on tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 18 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max450mW
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A
Input Capacitance (Ciss) (Max) @ Vds840pF @ 10V
Rds On (Max) @ Id, Vgs21mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.3V @ 1mA
Supplier Device Package8-SOP (5.5x6.0)

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