TPC8212-H(TE12LQ,M
MOSFET 2N-CH 30V 6A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC8212-H-TE12LQ-M is a dual N-channel MOSFET array designed for surface mount applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6A at 25°C. The MOSFET array offers a low on-resistance (Rds On) of 21mOhm at 3A, 10V, and incorporates logic level gate functionality. Key parameters include a gate charge (Qg) of 16nC (max) at 10V and input capacitance (Ciss) of 840pF (max) at 10V. With a maximum power dissipation of 450mW and an operating temperature of 150°C, this component is suitable for use in automotive and industrial power management applications. It is supplied in an 8-SOP (5.5x6.0) package on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 450mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 10V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
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