TPC8211(TE12L,Q,M)
MOSFET 2N-CH 30V 5.5A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage TPC8211-TE12L-Q-M- is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a Drain-Source voltage (Vdss) of 30V and a continuous Drain current (Id) of 5.5A at 25°C. The device offers a low on-resistance (Rds On) of 36mOhm maximum at 3A, 10V, and is specified with a logic level gate for enhanced compatibility. Key parameters include a maximum power dissipation of 450mW, a gate charge (Qg) of 25nC maximum at 10V, and an input capacitance (Ciss) of 1250pF maximum at 10V. The TPC8211-TE12L-Q-M- is housed in an 8-SOP surface mount package and operates within an ambient temperature range of -55°C to 150°C (TJ). This MOSFET array finds application in industrial automation, power management, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 450mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1250pF @ 10V |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
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