TPC8208(TE12L,Q,M)
MOSFET 2N-CH 20V 5A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage TPC8208-TE12L-Q-M- is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C. With a low on-resistance (Rds On) of 50mOhm at 2.5A and 4V Vgs, it minimizes conduction losses. The logic-level gate drive capability simplifies interfacing with microcontrollers. Key electrical parameters include a maximum gate charge (Qg) of 9.5nC at 5V and a maximum input capacitance (Ciss) of 780pF at 10V. The device dissipates a maximum power of 450mW and operates at an ambient temperature up to 150°C. It is housed in a surface-mount 8-SOP (5.5x6.0) package and supplied on tape and reel. This MOSFET array is commonly utilized in power management circuits within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 450mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
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