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TPC8208(TE12L,Q,M)

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TPC8208(TE12L,Q,M)

MOSFET 2N-CH 20V 5A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Toshiba Semiconductor and Storage TPC8208-TE12L-Q-M- is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C. With a low on-resistance (Rds On) of 50mOhm at 2.5A and 4V Vgs, it minimizes conduction losses. The logic-level gate drive capability simplifies interfacing with microcontrollers. Key electrical parameters include a maximum gate charge (Qg) of 9.5nC at 5V and a maximum input capacitance (Ciss) of 780pF at 10V. The device dissipates a maximum power of 450mW and operates at an ambient temperature up to 150°C. It is housed in a surface-mount 8-SOP (5.5x6.0) package and supplied on tape and reel. This MOSFET array is commonly utilized in power management circuits within the automotive and industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max450mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5A
Input Capacitance (Ciss) (Max) @ Vds780pF @ 10V
Rds On (Max) @ Id, Vgs50mOhm @ 2.5A, 4V
Gate Charge (Qg) (Max) @ Vgs9.5nC @ 5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.2V @ 200µA
Supplier Device Package8-SOP (5.5x6.0)

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