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TPC8207(TE12L,Q)

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TPC8207(TE12L,Q)

MOSFET 2N-CH 20V 6A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Toshiba Semiconductor and Storage TPC8207-TE12L-Q- is a 20V, 2 N-channel MOSFET array designed for robust performance in surface mount applications. This device offers a continuous drain current (Id) of 6A at 25°C and a low Rds(on) of 20mOhm at 4.8A and 4V. Featuring a logic level gate, it is suitable for low-voltage control applications. Key specifications include a gate charge (Qg) of 22nC at 5V and input capacitance (Ciss) of 2010pF at 10V. The power dissipation is rated at 450mW with an operating junction temperature of 150°C. Packaged in an 8-SOP (5.5x6.0) format, this component is commonly utilized in automotive and industrial automation systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max450mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A
Input Capacitance (Ciss) (Max) @ Vds2010pF @ 10V
Rds On (Max) @ Id, Vgs20mOhm @ 4.8A, 4V
Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.2V @ 200µA
Supplier Device Package8-SOP (5.5x6.0)

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