TPC8207(TE12L,Q)
MOSFET 2N-CH 20V 6A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage TPC8207-TE12L-Q- is a 20V, 2 N-channel MOSFET array designed for robust performance in surface mount applications. This device offers a continuous drain current (Id) of 6A at 25°C and a low Rds(on) of 20mOhm at 4.8A and 4V. Featuring a logic level gate, it is suitable for low-voltage control applications. Key specifications include a gate charge (Qg) of 22nC at 5V and input capacitance (Ciss) of 2010pF at 10V. The power dissipation is rated at 450mW with an operating junction temperature of 150°C. Packaged in an 8-SOP (5.5x6.0) format, this component is commonly utilized in automotive and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 450mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 2010pF @ 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 4.8A, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
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