TPC8207(TE12L)
MOSFET 2N-CH 20V 6A 8-SOPManufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
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Toshiba Semiconductor and Storage TPC8207-TE12L- is a dual N-channel MOSFET array designed for high-efficiency switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C. The MOSFET technology provides a low on-resistance (Rds On) of 20mOhm at 4.8A and 4V Vgs, ensuring minimal power dissipation. With a logic level gate, it is suitable for direct drive from low-voltage microcontrollers. Key parameters include a gate charge (Qg) of 22nC maximum at 5V and input capacitance (Ciss) of 2010pF maximum at 10V. The component is housed in an 8-SOIC package with surface mount capability, ideal for compact designs. This device finds application in power management, battery charging circuits, and consumer electronics. The product is supplied in a Digi-Reel® for automated assembly.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 750mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 2010pF @ 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 4.8A, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
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