

Manufacturer: Toshiba Semiconductor and Storage
Categories: FET, MOSFET Arrays
Quality Control: Learn More
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 10V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.74nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Supplier Device Package | 6-UDFN (2x2) |